THRESHOLD VOLTAGE OF A NARROW-WIDTH MOSFET

被引：17

作者：

AKERS, LA ^{[1
]}

机构：

[1] ROCKWELL INT,ELECTR RES CTR,ANAHEIM,CA 92803

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 01期

关键词：

D O I：

10.1049/el:19810036

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：49 / 51

页数：3

相关论文

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[2] SIMPLE APPROACH FOR ACCURATELY MODELING THRESHOLD VOLTAGE OF SHORT-CHANNEL MOSTS
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 453 - 461
[7] SIMPLE-MODEL FOR THRESHOLD VOLTAGE IN A SHORT-CHANNEL IGFET
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (10) : 1266 - 1268
[8] DEVICE CHARACTERISTICS OF SHORT-CHANNEL AND NARROW-WIDTH MOSFETS
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[9] YAU LD, 1974, SOLID STATE ELECTRON, V17, P1059, DOI 10.1016/0038-1101(74)90145-2