LOW-LEVEL CURRENTS IN INSULATED GATE FIELD-EFFECT TRANSISTORS

[1] BARRON MB, 1969, 55011 STANF EL LAB R, P123

[2] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) : 760 - +

[3] BRUGLER JS, PRIVATE COMMUNICATIO

[4] CRAWFORD RH, 1967, MOSFET CIRCUIT DESIG

[5] Davis P. J., 1967, NUMERICAL INTEGRATIO

[6] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J]. PHYSICAL REVIEW, 1968, 169 (03): : 619 - +

[7] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[8] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +

[9] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &

[10] DESIGN THEORY OF A SURFACE FIELD-EFFECT TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1964, 7 (06) : 423 - 430

[1] BARRON MB, 1969, 55011 STANF EL LAB R, P123

[2] SI-SIO2 FAST INTERFACE STATE MEASUREMENTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) : 760 - +

[3] BRUGLER JS, PRIVATE COMMUNICATIO

[4] CRAWFORD RH, 1967, MOSFET CIRCUIT DESIG

[5] Davis P. J., 1967, NUMERICAL INTEGRATIO

[6] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J]. PHYSICAL REVIEW, 1968, 169 (03): : 619 - +

[7] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[8] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +

[9] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &

[10] DESIGN THEORY OF A SURFACE FIELD-EFFECT TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1964, 7 (06) : 423 - 430