A MODEL OF A NARROW-WIDTH MOSFET INCLUDING TAPERED OXIDE AND DOPING ENCROACHMENT

被引：30

作者：

AKERS, LA ^{[1
]}

BEGUWALA, MME ^{[1
]}

CUSTODE, FZ ^{[1
]}

机构：

[1] ROCKWELL INT,MICROELECTR RES & DEV CTR,ANAHEIM,CA 92803

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 12期

关键词：

D O I：

10.1109/T-ED.1981.20635

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1490 / 1495

页数：6

相关论文

共 12 条

[1] EFFECT OF FIELD-DEPENDENT MOBILITY ON THE THRESHOLD VOLTAGE OF A SMALL GEOMETRY MOSFET
AKERS, LA
[J]. SOLID-STATE ELECTRONICS, 1980, 23 (02) : 173 - 175
[2] THRESHOLD VOLTAGE OF A NARROW-WIDTH MOSFET
AKERS, LA
[J]. ELECTRONICS LETTERS, 1981, 17 (01) : 49 - 51
[3] SIMPLE APPROACH FOR ACCURATELY MODELING THRESHOLD VOLTAGE OF SHORT-CHANNEL MOSTS
BANDY, WR
KOKALIS, DP
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (08) : 675 - 680
[4] Custode F. Z., 1980, International Electron Devices Meeting. Technical Digest, P760
[5] INFLUENCE OF CHANNEL WIDTH ON THRESHOLD VOLTAGE MODULATION IN MOSFETS
JEPPSON, KO
[J]. ELECTRONICS LETTERS, 1975, 11 (14) : 297 - 299
[6] Kotecha H., 1980, International Electron Devices Meeting. Technical Digest, P724
[7] THRESHOLD VOLTAGE OF NARROW CHANNEL FIELD-EFFECT TRANSISTORS
KROELL, KE
ACKERMAN, GK
[J]. SOLID-STATE ELECTRONICS, 1976, 19 (01) : 77 - 81
[8] ANALYSIS OF THRESHOLD VOLTAGE FOR SHORT-CHANNEL IGFETS
LEE, HS
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (12) : 1407 - 1417
[9] A SIMPLE-MODEL OF THE THRESHOLD VOLTAGE OF SHORT AND NARROW CHANNEL MOSFETS
MERCKEL, G
[J]. SOLID-STATE ELECTRONICS, 1980, 23 (12) : 1207 - 1213
[10] ANALYTICAL MODELS OF THRESHOLD VOLTAGE AND BREAKDOWN VOLTAGE OF SHORT-CHANNEL MOSFETS DERIVED FROM 2-DIMENSIONAL ANALYSIS
TOYABE, T
ASAI, S
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 453 - 461