ZONE-MELTING RECRYSTALLIZATION OF ENCAPSULATED SILICON FILMS ON SIO2 - MORPHOLOGY AND CRYSTALLOGRAPHY

被引：69

作者：

GEIS, MW ^{[1
]}

SMITH, HI ^{[1
]}

TSAUR, BY ^{[1
]}

FAN, JCC ^{[1
]}

MABY, EW ^{[1
]}

ANTONIADIS, DA ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

关键词：

D O I：

10.1063/1.93021

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：158 / 160

页数：3

共 15 条

[1] BEAM KE, 1978, IEEE T ELECTRON DEV, V25, P1185
[2] BEZJIAN K, UNPUB
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[4] LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS
FAN, JCC
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[J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 365 - 367
[5] CRYSTALLIZATION OF AMORPHOUS SILICON FILMS BY ND-YAG LASER-HEATING
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[J]. APPLIED PHYSICS LETTERS, 1975, 27 (04) : 224 - 226
[6] FAN JCC, 1980, 14TH P IEEE PHOT SPE
[7] GAT A, COMMUNICATION
[8] SUMMARY ABSTRACT - SILICON GRAPHOEPITAXY
GEIS, MW
ANTONIADIS, DA
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MOUNTAIN, RW
SMITH, HI
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02): : 229 - 230
[9] CRYSTALLOGRAPHIC ORIENTATION OF SILICON ON AN AMORPHOUS SUBSTRATE USING AN ARTIFICIAL SURFACE-RELIEF GRATING AND LASER CRYSTALLIZATION
GEIS, MW
FLANDERS, DC
SMITH, HI
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 71 - 74
[10] SILICON GRAPHOEPITAXY USING A STRIP-HEATER OVEN
GEIS, MW
ANTONIADIS, DA
SILVERSMITH, DJ
MOUNTAIN, RW
SMITH, HI
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (05) : 454 - 456