ELECTRONIC TRANSPORT IN BANDGAP STATES OF HYDROGENATED AMORPHOUS-SILICON

[1] ALLAN D, 1977, AMORPHOUS LIQUID SEM, P323

[2] CRANDALL R, UNPUBLISHED

[3] DOHLER GH, 1977, AMORPHOUS LIQUID SEM, P372

[4] DRESNER J, COMMUNICATION

[5] Le Comber P.G., 1973, ELECT STRUCTURAL PRO, P373

[6] MOTT NF, 1971, ELECT PROCESSES NONC, P238

[7] TRANSPORT AND RECOMBINATION PROPERTIES OF AMORPHOUS ARSENIC TELLURIDE [J]. PHYSICAL REVIEW B, 1975, 12 (06): : 2448 - 2454

[8] Rose A., 1951, RCA REV, V12, P362

[9] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J]. PHILOSOPHICAL MAGAZINE, 1976, 33 (06): : 935 - 949

[10] STAEBLER D, COMMUNICATION

[1] ALLAN D, 1977, AMORPHOUS LIQUID SEM, P323

[2] CRANDALL R, UNPUBLISHED

[3] DOHLER GH, 1977, AMORPHOUS LIQUID SEM, P372

[4] DRESNER J, COMMUNICATION

[5] Le Comber P.G., 1973, ELECT STRUCTURAL PRO, P373

[6] MOTT NF, 1971, ELECT PROCESSES NONC, P238

[7] TRANSPORT AND RECOMBINATION PROPERTIES OF AMORPHOUS ARSENIC TELLURIDE [J]. PHYSICAL REVIEW B, 1975, 12 (06): : 2448 - 2454

[8] Rose A., 1951, RCA REV, V12, P362

[9] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J]. PHILOSOPHICAL MAGAZINE, 1976, 33 (06): : 935 - 949

[10] STAEBLER D, COMMUNICATION