GROWTH-STUDIES OF FERROELECTRIC OXIDE LAYERS PREPARED BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION

被引：43

作者：

WILLS, LA ^{[1
]}

FEIL, WA ^{[1
]}

WESSELS, BW ^{[1
]}

TONGE, LM ^{[1
]}

MARKS, TJ ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,DEPT CHEM,EVANSTON,IL 60208

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90547-I

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Low pressure organometallic chemical vapor deposition was used to prepare ferroelectric thin films. Both the bismuth and the strontium titanate systems were investigated. Under the optimal growth conditions phase pure, textured films could be prepared. The growth parameters which influenced composition and phase stability were examined.

引用

页码：712 / 715

页数：4

共 4 条

[1] THE GROWTH OF FERROELECTRIC OXIDES BY MOCVD [J].

BRIERLEY, CJ ;

TRUNDLE, C ;

CONSIDINE, L ;

WHATMORE, RW ;

AINGER, FW .

FERROELECTRICS, 1989, 91 :181-192

[2] ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION OF STRONTIUM-TITANATE [J].

FEIL, WA ;

WESSELS, BW ;

TONGE, LM ;

MARKS, TJ .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (08) :3858-3861

[3] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF PBTIO3 THIN-FILMS [J].

KWAK, BS ;

BOYD, EP ;

ERBIL, A .

APPLIED PHYSICS LETTERS, 1988, 53 (18) :1702-1704

[4]

SCHWARTZ SL, 1989, FERROELECTRICS, V93, P37

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