THE EFFECT OF THERMAL-TREATMENT ON THE ELECTRICAL-ACTIVITY AND MOBILITY OF DISLOCATIONS IN SI

[1] BARDSLEY W, 1960, PROGR SEMICOND, V4, P1955

[2] BONDARENKO IE, 1973, ZH EKSP TEOR FIZ+, V64, P2196

[3] BONDARENKO IE, 1976, DOKL AKAD NAUK SSSR+, V229, P1087

[4] THEORY OF DISLOCATION MOBILITY IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1963, 131 (01): : 58 - &

[5] Eremenko V. G., 1977, Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, V73, P1129

[6] EREMENKO VG, 1977, PISMA ESKP TEOR FIZ, V26, P72

[7] EREMENKO VT, 1978, FIZ TEKH POLUPROV, V12, P273

[8] EFFECT OF IMPURITIES ON INDIVIDUAL DISLOCATION MOBILITY IN SILICON [J]. PHYSICA STATUS SOLIDI, 1969, 35 (01): : 79 - +

[9] Erofev V. N., 1971, Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, V60, P1780

[10] GEORGE A, 1972, PHYS STATUS SOLIDI B, V53, P483, DOI 10.1002/pssb.2220530209

[1] BARDSLEY W, 1960, PROGR SEMICOND, V4, P1955

[2] BONDARENKO IE, 1973, ZH EKSP TEOR FIZ+, V64, P2196

[3] BONDARENKO IE, 1976, DOKL AKAD NAUK SSSR+, V229, P1087

[4] THEORY OF DISLOCATION MOBILITY IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1963, 131 (01): : 58 - &

[5] Eremenko V. G., 1977, Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, V73, P1129

[6] EREMENKO VG, 1977, PISMA ESKP TEOR FIZ, V26, P72

[7] EREMENKO VT, 1978, FIZ TEKH POLUPROV, V12, P273

[8] EFFECT OF IMPURITIES ON INDIVIDUAL DISLOCATION MOBILITY IN SILICON [J]. PHYSICA STATUS SOLIDI, 1969, 35 (01): : 79 - +

[9] Erofev V. N., 1971, Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, V60, P1780

[10] GEORGE A, 1972, PHYS STATUS SOLIDI B, V53, P483, DOI 10.1002/pssb.2220530209