EFFECT OF IMPURITIES ON INDIVIDUAL DISLOCATION MOBILITY IN SILICON

被引：95

作者：

EROFEEV, VN

NIKITENKO, VI

OSVENSKII, VB

机构：

[1] Institute of Solid State Physics, Academy of Sciences of the Ussr

来源：

PHYSICA STATUS SOLIDI | 1969年 / 35卷 / 01期

关键词：

D O I：

10.1002/pssb.19690350105

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

An investigation was made of the dependence of individual 60° and screw dislocation velocities on stress, temperature, and impurity (B, As, Sb) concentration in silicon single crystals. It was found that both donor and acceptor impurities result in decrease of the activation energy (U) of the dislocation motion. The donor influence on U is stronger. The possible reasons for the observed phenomenon are analysed in terms of the effect of impurities on the mechanism of overcoming of Peierls stresses by a dislocation. Copyright © 1969 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：79 / +

页数：1

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