HYDROGEN-INDUCED PLATELETS IN SILICON STUDIED BY TRANSMISSION ELECTRON-MICROSCOPY

被引：67

作者：

MUTO, S ^{[1
]}

TAKEDA, S ^{[1
]}

HIRATA, M ^{[1
]}

机构：

[1] OSAKA UNIV,FAC SCI,DEPT PHYS,TOYONAKA,OSAKA 560,JAPAN

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1995年 / 72卷 / 04期

关键词：

D O I：

10.1080/01418619508239953

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structure of hydrogen-induced platelets (HIPs) in silicon has been examined with conventional transmission electron microscopy (CTEM) and high-resolution transmission electron microscopy (HRTEM). HRTEM was utilized to clarify the atomic structure in which hydrogen atoms are assumed to saturate the broken bonds between adjacent (111) planes. The structural model was refined by introducing a reliability factor in real space for quantitative comparison between experimental and simulated images. Some contrast variations in HRTEM images can be well explained by allowing for atomic ledges on the (111) plane with broken bonds. Furthermore it is found from the strain contrast in a CTEM image that a considerable amount of H-2 gas is contained in the open space of the HIP, which results in an internal pressure as large as 1 GPa. The formation process of HIPs is discussed.

引用

页码：1057 / 1074

页数：18

共 31 条

[1] MICROSTRUCTURAL DEFECTS INDUCED BY IMPLANTATION OF HYDROGEN IN (111) SILICON [J].

BEAUFORT, MF ;

GAREM, H ;

LEPINOUX, J .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1994, 69 (05) :881-901

[2] A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS [J].

BIERSACK, JP ;

HAGGMARK, LG .

NUCLEAR INSTRUMENTS & METHODS, 1980, 174 (1-2) :257-269

[3] DIATOMIC-HYDROGEN-COMPLEX DIFFUSION AND SELF-TRAPPING IN CRYSTALLINE SILICON [J].

CHANG, KJ ;

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1989, 62 (08) :937-940

[4]

CHANG KJ, 1989, PHYS REV B, P11644

[5]

CHU WK, 1977, ION IMPLANTATION SEM

[6] STATE AND MOTION OF HYDROGEN IN CRYSTALLINE SILICON [J].

DEAK, P ;

SNYDER, LC ;

CORBETT, JW .

PHYSICAL REVIEW B, 1988, 37 (12) :6887-6892

[7] STRUCTURE OF THE (1 1 1) HYDROGEN PLATELET IN SILICON [J].

DEAK, P ;

ORTIZ, CR ;

SNYDER, LC ;

CORBETT, JW .

PHYSICA B, 1991, 170 (1-4) :223-226

[8]

DEAK P, 1989, RADIAT EFF DEFECT S, V111, P77

[9] BOND-CENTERED INTERSTITIAL HYDROGEN IN SILICON - SEMIEMPIRICAL ELECTRONIC-STRUCTURE CALCULATIONS [J].

DELEO, GG ;

DOROGI, MJ ;

FOWLER, WB .

PHYSICAL REVIEW B, 1988, 38 (11) :7520-7529

[10] EQUILIBRIUM SITES AND ELECTRONIC-STRUCTURE OF INTERSTITIAL HYDROGEN IN SI [J].

ESTREICHER, S .

PHYSICAL REVIEW B, 1987, 36 (17) :9122-9127

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