11-GHZ AND 12-GHZ MULTI-WATT INTERNAL MATCHING FOR POWER GAAS-FETS

被引：3

作者：

TAKAYAMA, Y

OGAWA, T

AONO, Y

机构：

[1] Central Research Laboratories, Nippon Electric Co. Ltd., Miyazaki, Takatsu-ku, Kawasaki

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 11期

关键词：

Field-effect transistors; Power transistors; Solid-state microwave devices;

D O I：

10.1049/el:19790232

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Multiwatt internal-matching techniques for multichip power GaAs f.e.t.s at 11 GHz and 12 GHz bands have been developed, adopting a lumped-element input circuit and a semidistributed output circuit. The internally matched device for the 11 GHz band exhibits 4 W power output with 3·4 dB associated gain, and the 12 GHz device 3·6 W power output with 3 dB associated gain. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：326 / 328

页数：3