BROAD-BAND INTERNAL MATCHING OF MICROWAVE-POWER GAAS MESFETS

被引：11

作者：

HONJO, K

TAKAYAMA, Y

HIGASHISAKA, A

机构：

[1] Central Research Laboratories, Nippon Electric Company, Ltd., Miyazaki, Takatsu-ku, Kawasaki

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1979年 / 27卷 / 01期

关键词：

D O I：

10.1109/TMTT.1979.1129549

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Broad-band internal matching techniques for high-power GaAs MESFET's at C band have been developed, adopting novel circuit configurations and large-signal characterizations in the circuit design. The lumped-element two-section input matching network is formed on a single ceramic plate with a high dielectric constant. The semidistributed single-section output circuit is formed in microstrip pattern on an alumina plate. The internally matched GaAs FET with 11200-µm total gate width developed has a 2.5 -W power output at 1-dB gain compression and a 4.4- W saturated power output with 5.5-dB linear gain from 4.2 to 7.2 GHz without external matching. The FET internally matched from 4.5 to 6.5 GHz exhibited 5W saturated power output with 6-dB linear gain. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：3 / 8

页数：6

共 8 条

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[3]

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[4]

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[5]

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