PIEZOREFLECTANCE CHARACTERIZATION OF RESONANT TUNNELING AND MODULATION-DOPED HETEROSTRUCTURES

被引：17

作者：

TOBER, RL

PAMULAPATI, J

BHATTACHARYA, PK

OH, JE

机构：

[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,SOLID STATE ELECTR LAB,ANN ARBOR,MI 48109

[2] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,CTR HIGH FREQUENCY MICROELECTR,ANN ARBOR,MI 48109

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1989年 / 18卷 / 03期

关键词：

D O I：

10.1007/BF02657986

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：379 / 384

页数：6

共 11 条

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[8] Investigation of quantum well and tunnel barrier growth by resonant tunneling [J].

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[9] PHOTOREFLECTANCE MODULATION MECHANISMS IN GAAS-ALXGA1-XAS MULTIPLE QUANTUM-WELLS [J].

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[10] PIEZOREFLECTANCE AS A SUPPLEMENT TO PHOTOREFLECTANCE FOR NONDESTRUCTIVE CHARACTERIZATION OF GAAS/ALXGA1-XAS MULTIPLE QUANTUM WELLS [J].

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