AEROSOL JET ETCHING

被引：4

作者：

CHEN, YL ^{[1
]}

BROCK, JR ^{[1
]}

TRACHTENBERG, I ^{[1
]}

机构：

[1] UNIV TEXAS,DEPT CHEM ENGN,AUSTIN,TX 78712

来源：

AEROSOL SCIENCE AND TECHNOLOGY | 1990年 / 12卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1080/02786829008959397

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

A new etching technology, termed aerosol jet etching (AJE), has been successfully demonstrated and investigated to determine its suitability for microelectronics applications. This technology combines the excellent selectivity of wet chemical etching, the anisotropy of dry etching techniques, and low chemical usage. Experimental results and theoretical interpretations are given for patterned hydrofluoric acid etching of silicon dioxide layers on silicon. The effects of various operating parameters on etch rate, etched surface morphology, side wall profile, and anisotropy are described. These results are used to propose optimum operating conditions for AJE. Also, some unusual surface structures formed under certain conditions during AJE are-described. © 1990 Elsevier Science Publishing Co., Inc.

引用

页码：842 / 855

页数：14

共 14 条

[1]

[Anonymous], 1974, HOMOGENEOUS NUCL THE

[2] HIGH-VELOCITY INERTIAL IMPACTORS [J].