ANODIC OXIDATION AS SECTIONING TECHNIQUE FOR ANALYSIS OF IMPURITY CONCENTRATION PROFILES IN SILICON

被引：53

作者：

MANARA, A

OSTIDICH, A

PEDROLI, G

RESTELLI, G

机构：

来源：

关键词：

D O I：

10.1016/0040-6090(71)90084-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：359 / &

共 48 条

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BADER, R
KALBITZER, S
[J]. APPLIED PHYSICS LETTERS, 1970, 16 (01) : 13 - +
[4] BERRY BM, 1966, ASDTDR63316 RTI REPT, V12
[5] BLAMIRES NG, 1967, AERER5519
[6] BUCHAMAN B, 1967, COLL INT APPLICATION, P649
[7] BUSEN KM, 1966, T METALL SOC AIME, V236, P306
[8] CROSET M, 1968, ONDE ELECTR, V48, P1057
[9] CROSET M, 1966, ONDE ELEC, V47, P590
[10] HIGH-DOSE IMPLANTATIONS OF P, AS, AND SB IN SILICON - A COMPARISON OF ROOM-TEMPERATURE IMPLANTATIONS FOLLOWED BY A 550 DEGREES C ANNEAL AND IMPLANTATIONS CONDUCTED AT 600 DEGREES C
CROWDER, BL
FAIRFIELD, JM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (03) : 363 - +