RECENT NEGATIVE-ION SOURCE DEVELOPMENTS

被引:2
作者
ALTON, GD
机构
[1] Oak Ridge National Laboratory, Oak Ridqe
关键词
D O I
10.1109/TNS.1979.4330435
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This report describes recent results obtained from studies associated with the development of negative ion sources which utilize sputtering in a diffuse cesium plasma as a means of ion beam generation. Data are presented which relate negative ion yield and important operational parameters such as cesium oven temperature and sputter probe voltage from each of the following sources: 1) A source based in principle according to the University of Aarhus2, 3 design and 2) an axial geometry source. The important design aspects of the sources are given - along with a list of the negative ion intensities observed to date. Also a qualitative description and interpretation of the negative ion generation mechanism in sources which utilize sputtering in the presence of cesium is given. Copyright © 1978 by The Institute of Electrical and Electronics Engineers, Inc.
引用
收藏
页码:1542 / 1548
页数:7
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