ANALYTICAL CALCULATION OF THE CAPACITANCE ASSOCIATED WITH A SINGLE QUANTUM-WELL LOCATED IN A JUNCTION

被引：13

作者：

LETARTRE, X ^{[1
]}

STIEVENARD, D ^{[1
]}

BARBIER, E ^{[1
]}

机构：

[1] THOMSON CSF,CENT RES LAB,F-91401 ORSAY,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.347480

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We perform an analytical calculation of the capacitance of a single quantum well located in a junction versus the applied bias (the so-called capacitance-voltage characteristic), using mainly the Poisson equation and the Fermi statistics of the electrons in the well. This model reproduces the experimental behavior of such a structure and is validated by a comparison with a complete numerical simulation. Finally, we use our model to study a GaAs-GaInAs-GaAs single quantum well.

引用

页码：7912 / 7914

页数：3

共 5 条

[1] MEASUREMENT OF ISOTYPE HETEROJUNCTION BARRIERS BY C-V PROFILING [J].