OPTICAL INVESTIGATION OF A NEW TYPE OF VALENCE-BAND CONFIGURATION IN INXGA1-XAS-GAAS STRAINED SUPERLATTICES

被引：215

作者：

MARZIN, JY

CHARASSE, MN

SERMAGE, B

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 31卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.31.8298

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8298 / 8301

页数：4

共 18 条

[1] SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION [J].

BASTARD, G .

PHYSICAL REVIEW B, 1981, 24 (10) :5693-5697

[2] EFFECTS OF UNIAXIAL STRESS ON ELECTROREFLECTANCE SPECTRUM OF GE AND GAAS [J].

CHANDRASEKHAR, M ;

POLLAK, FH .

PHYSICAL REVIEW B, 1977, 15 (04) :2127-2144

[3]

Dingle R, 1975, FESTKORPERPROBLEME, V15, P21

[4] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J].

ESAKI, L ;

TSU, R .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) :61-&

[5]

FRITZ IJ, 1982, I PHYS C SER, V65, P241

[6]

GOLDSTEIN L, 1982, 1982 P INT M EP PERP

[7] ENERGY-LEVELS OF WANNIER EXCITONS IN GAAS-GA1-XALXAS QUANTUM-WELL STRUCTURES [J].

GREENE, RL ;

BAJAJ, KK ;

PHELPS, DE .

PHYSICAL REVIEW B, 1984, 29 (04) :1807-1812

[8] VOLUME DEPENDENCE OF OPTICAL-TRANSITIONS IN GAAS - PHOTOMODULATED REFLECTIVITY [J].

HANFLAND, M ;

SYASSEN, K ;

CHRISTENSEN, NE .

JOURNAL DE PHYSIQUE, 1984, 45 (NC8) :57-60

[9] PREPARATION AND PROPERTIES OF BULK GAXINL-XAS CRYSTALS [J].

LEU, YT ;

THIEL, FA ;

SCHEIBER, H ;

RUBIN, JJ ;

MILLER, BI ;

BACHMANN, KJ .

JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) :663-674

[10] REFRACTIVE INDEX OF GAAS [J].

MARPLE, DTF .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) :1241-&

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