THERMALLY INDUCED LUMINESCENT CENTERS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS

被引：4

作者：

NAKAYAMA, H

KATSURA, J

NISHINO, T

HAMAKAWA, Y

机构：

来源：

JOURNAL OF LUMINESCENCE | 1981年 / 24-5卷 / NOV期

关键词：

D O I：

10.1016/0022-2313(81)90214-3

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：35 / 38

页数：4

共 7 条

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[5] LUMINESCENCE OF THERMALLY INDUCED DEFECTS IN SI CRYSTALS [J].

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