DOPING UNIFORMITY AND GEOMETRY OF LSA OSCILLATOR DIODES

被引：18

作者：

COPELAND, JA

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1967年 / ED14卷 / 09期

关键词：

D O I：

10.1109/T-ED.1967.15993

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：497 / +

页数：1

相关论文

共 7 条

[1] CONSTRUCTION AND PERFORMANCE OF EPITAXIAL TRANSFERRED ELECTRON OSCILLATORS
BOTT, IB
HILSUM, C
SMITH, KCH
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (02) : 137 - &
[2] BRADY DP, 1966, P IEEE, V54, P1499
[3] LSA OSCILLATOR-DIODE THEORY
COPELAND, JA
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) : 3096 - +
[4] CW OPERATION OF LSA OSCILLATOR DIODES - 44 TO 88 GHZ
COPELAND, JA
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (01): : 284 - +
[5] THEORETICAL STUDY OF A GUNN DIODE IN A RESONANT CIRCUIT
COPELAND, JA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (02) : 55 - +
[6] LSA OPERATION OF LARGE VOLUME BULK GAAS SAMPLES
KENNEDY, WK
EASTMAN, LF
GILBERT, RJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) : 500 - +
[7] SKILLING HH, 1960, FUNDAMENTALS ELECTRI, P126