LSA OPERATION OF LARGE VOLUME BULK GAAS SAMPLES

被引：21

作者：

KENNEDY, WK

EASTMAN, LF

GILBERT, RJ

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1967年 / ED14卷 / 09期

关键词：

D O I：

10.1109/T-ED.1967.15994

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：500 / +

页数：1

共 18 条

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BUTCHER, PN ;

FAWCETT, W .

PHYSICS LETTERS, 1966, 21 (05) :489-&

[2] INFRARED RADIATION FROM BULK GAAS - (DC PULSE EXCITATION - 9000 A - E) [J].

CHANG, KKN ;

LIU, SG ;

PRAGER, HJ .

APPLIED PHYSICS LETTERS, 1966, 8 (08) :196-&

[3] SWITCHING AND LOW-FIELD BREAKDOWN IN N-GAAS BULK DIODES [J].

COPELAND, JA .

APPLIED PHYSICS LETTERS, 1966, 9 (04) :140-+

[4] A NEW MODE OF OPERATION FOR BULK NEGATIVE RESISTANCE OSCILLATORS [J].

COPELAND, JA .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10) :1479-+

[5] CW OPERATION OF LSA OSCILLATOR DIODES - 44 TO 88 GHZ [J].

COPELAND, JA .

BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (01) :284-+

[6] THEORETICAL STUDY OF A GUNN DIODE IN A RESONANT CIRCUIT [J].

COPELAND, JA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (02) :55-+

[7]

COPELAND JA, PRIVATE COMMUNICATIO

[8]

GUNN JB, PRIVATE COMMUNICATIO

[9]

GUNN JB, 1967, MEASURED DOMAIN PROP

[10] LOCALIZED TEMPORARY INCREASE IN MATERIAL CONDUCTIVITY FOLLOWING IMPACT IONIZATION IN A GUNN-EFFECT DOMAIN [J].

HEEKS, JS ;

WOODE, AD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) :512-+

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