LOCALIZED TEMPORARY INCREASE IN MATERIAL CONDUCTIVITY FOLLOWING IMPACT IONIZATION IN A GUNN-EFFECT DOMAIN

被引：18

作者：

HEEKS, JS

WOODE, AD

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1967.15996

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：512 / +

页数：1

共 8 条

[1]

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BUTCHER, PN ;

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BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (07) :841-&

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[5]

HEEKS JS, 1966, ELECTRON LETT, V2, P330

[6] MULTIPLE CURRENT SPIKING IN LONG GUNN OSCILLATORS [J].

OWENS, JM ;

KINO, GS .

PHYSICS LETTERS, 1966, 23 (07) :453-&

[7]

OWENS JM, UNPUBLISHED DATA

[8] DETERMINATION OF DEEP CENTERS IN CONDUCTING GALLIUM ARSENIDE [J].

WILLIAMS, R .