RESISTIVE GATE CTD AREA-IMAGE SENSOR

被引：5

作者：

HEYNS, H

VANSANTEN, JG

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 02期

关键词：

D O I：

10.1109/T-ED.1978.19050

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：135 / 139

页数：5

相关论文

共 13 条

[1] AMELIO GF, 1973, IEEE EASTCON REC
[2] IMAGING DEVICES USING CHARGE-COUPLED CONCEPT
BARBE, DF
[J]. PROCEEDINGS OF THE IEEE, 1975, 63 (01) : 38 - 67
[3] INFLUENCE OF BULK TRAPS ON CHARGE-TRANSFER INEFFICIENCY OF BULK CHARGE-COUPLED-DEVICES
COLLET, MG
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (01) : 156 - 159
[4] FINAL STAGE OF CHARGE-TRANSFER PROCESS IN CHARGE-COUPLED-DEVICES
DAIMON, Y
MOHSEN, AM
MCGILL, TC
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (04) : 266 - 272
[5] PERISTALTIC CHARGE-COUPLED DEVICE - NEW TYPE OF CHARGE-TRANSFER DEVICE
ESSER, LJM
[J]. ELECTRONICS LETTERS, 1972, 8 (25) : 620 - &
[6] ESSER LJM, 1974, ISSCC PHILADELPHIA D, P28
[7] SURFACE-CHARGE TRANSPORT WITH AN MOS-TRANSMISSION-LINE
HOFFMANN, K
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 177 - 181
[8] TWIN-LAYER PCCD PERFORMANCE FOR DIFFERENT DOPING LEVELS OF SURFACE-LAYER
PEEK, HL
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (01) : 167 - 170
[9] RODGERS RL, 1975, ISSCC DIG TECH PAPER, P188
[10] BUCKET-BRIGADE ELECTRONICS-NEW POSSIBILITIES FOR DELAY, TIME-AXIS CONVERSION, AND SCANNING
SANGSTER, FL
TEER, K
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1969, SC 4 (03) : 131 - &