A NOVEL METHOD OF SPUTTER DEPOSITION UTILIZING A HOT-CATHODE PENNING ION-SOURCE

A new-type ion source based on characteristics of Penning discharge has been devised for sputter deposition. A hot cathode was axially integrated, resulting in high-density plasma at a pressure of lower than 1×10-3 Torr. Sputter deposition could be performed at a low acceleration voltage of 0.20 kV. Plasma parameters, i.e., anode voltage, filament power, and gas pressure, could be independently changed, enabling us to control the deposition process precisely. © 1990 The Japan Society of Applied Physics.