OPTICAL REFLECTIVITY OF ION-IMPLANTED AMORPHOUS GAAS

被引：12

作者：

GRASSO, V

MONDIO, G

SAITTA, G

CAMPISANO, SU

FOTI, G

RIMINI, E

机构：

[1] UNIV CATANIA,IST STRUTTURA MAT,I-95125 CATANIA,ITALY

[2] CNR,NAZL STRUTTURA MAT GRP,MESSINA,ITALY

[3] CNR,NAZL STRUTTRA MAT GRP,CATANIA,ITALY

来源：

关键词：

D O I：

10.1063/1.90444

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：632 / 634

页数：3

共 19 条

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ASPNNES, DE
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[3] THICK SAMPLE ANALYSIS BY ION INDUCED X-RAYS
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[9] FUNDAMENTAL REFLECTIVITY OF GAAS AT LOW TEMPERATURE
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[J]. PHYSICAL REVIEW LETTERS, 1962, 9 (03) : 97 - &
[10] HASS G, 1960, J OPT SOC AM, V50, P1133