SEMICONDUCTOR ELECTRODES .20. PHOTOGENERATION OF SOLVATED ELECTRONS ON P-TYPE GAAS ELECTRODES IN LIQUID-AMMONIA

被引：40

作者：

MALPAS, RE ^{[1
]}

ITAYA, K ^{[1
]}

BARD, AJ ^{[1
]}

机构：

[1] UNIV TEXAS,DEPT CHEM,AUSTIN,TX 78712

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 1979年 / 101卷 / 10期

关键词：

D O I：

10.1021/ja00504a006

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The electrochemical behavior of p-type GaAs electrodes in liquid ammonia, in the dark and under illumination, has been investigated. Results show that it is possible to photogenerate solvated electrons (es-) from the semiconductor at an underpotential of about 0.9 V compared to Pt, indicating an extremely negative flatband potential for p-GaAs in NH3 compared to that found in other solvent systems. The dark collection (oxidation) of solvated electrons appears to occur via surface states at energies in the gap region. A regenerative photovoltaic cell based on the system p-GaAs/NH3, es-/Pt is also described. © 1979, American Chemical Society. All rights reserved.

引用

页码：2535 / 2537

页数：3

共 16 条

[1]

BAUER D, 1975, ELECTROANALYTICAL CH, V8

[2]

DOVTHIT RC, 1960, J AM CHEM SOC, V82, P4472

[3] SEMICONDUCTOR ELECTRODES .2. ELECTROCHEMISTRY AT N-TYPE TIO2 ELECTRODES IN ACETONITRILE SOLUTIONS [J].