ISOTHERMAL-DIELECTRIC-RELAXATION CURRENTS IN THIN-FILM AL-CEF3-AL SAMPLES

被引:30
作者
NADKARNI, GS [1 ]
SIMMONS, JG [1 ]
机构
[1] UNIV TORONTO,ELECT ENGN DEPT,TORONTO,ONTARIO,CANADA
来源
PHYSICAL REVIEW B | 1973年 / 7卷 / 08期
关键词
D O I
10.1103/PhysRevB.7.3719
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:3719 / 3725
页数:7
相关论文
共 8 条
[1]   DETERMINATION OF DEFECT NATURE OF MOO3 FILMS USING DIELECTRIC-RELAXATION CURRENTS [J].
NADKARNI, GS ;
SIMMONS, JG .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) :3650-&
[2]   AC ELECTRICAL PROPERTIES AND I-V CHARACTERISTICS OF MOO3 FILM UNDER DC BIAS [J].
NADKARNI, GS ;
SIMMONS, JG .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) :3741-&
[3]   ELECTRICAL PROPERTIES OF EVAPORATED MOLYBDENUM OXIDE FILMS [J].
NADKARNI, GS ;
SIMMONS, JG .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (02) :545-&
[4]   TRANSITION FROM ELECTRODE-LIMITED TO BULK-LIMITED CONDUCTION PROCESSES IN METAL-INSULATOR-METAL SYSTEMS [J].
SIMMONS, JG .
PHYSICAL REVIEW, 1968, 166 (03) :912-&
[7]   ALTERNATING CURRENT ELECTRICAL PROPERTIES OF EVAPORATED MOLYBDENUM OXIDE FILMS [J].
SIMMONS, JG ;
NADKARNI, GS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (01) :12-&
[8]  
SIMMONS JH, TO BE PUBLISHED