TRANSITION FROM ELECTRODE-LIMITED TO BULK-LIMITED CONDUCTION PROCESSES IN METAL-INSULATOR-METAL SYSTEMS

被引:143
作者
SIMMONS, JG
机构
[1] Physics Department, University of Lancaster, Lancaster
来源
PHYSICAL REVIEW | 1968年 / 166卷 / 03期
关键词
D O I
10.1103/PhysRev.166.912
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
If a blocking contact exists at a metal-semiconductor interface, the conduction process is electrode-limited and will normally remain so, that is, it will not become bulk-limited with increasing applied voltage unless the semiconductor is inordinately thick. It is shown, however, that in an insulator containing a high density of traps and donors, such as one might expect in evaporated insulating films, the conduction process can change from being electrode-limited to being bulk-limited. This process results at low voltages in a very steep I-V characteristic which is essentially thickness-independent (electrode-limited), and at high voltages in a law Iâexp βV12 which is thickness-dependent (bulk-limited). The results are shown to be in agreement with existing experimental data. © 1968 The American Physical Society.
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页码:912 / &
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