CURRENT STATUS AND FUTURE-PROSPECTS OF POLY-SI DEVICES

被引：29

作者：

CLARK, MG

机构：

[1] GEC Hirst Research Center, Hertfordshire

来源：

IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS | 1994年 / 141卷 / 01期

关键词：

TRANSISTORS; POLY-SI; GLASS SUBSTRATES; THIN FILM;

D O I：

10.1049/ip-cds:19949953

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin-film polysilicon insulated-gate field effect transistors deposited on glass substrates are the subject of worldwide research and development activity. The greatest motivation for this is their application to flat-panel displays, including, in particular, active-matrix liquid crystal displays (AMLCDs), where they offer several important advantages over the more mature amorphous silicon thin-film transistor (TFT) technology. One of these is the ready availability of both n-type and p-type poly-Si TFTs. Polysilicon-on-glass CMOS TFT technology may be used to fabricate AMLCD drivers on the display substrate; it can also be used in a variety of other applications such as printers, scanners, smart sensors and neural networks. This review identifies the major achievements and key issues in the development of poly-Si TFT technology for both display and nondisplay applications.

引用

页码：3 / 8

页数：6

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