LARGE-AREA ION DOPING TECHNIQUE WITH BUCKET-TYPE ION-SOURCE FOR POLYCRYSTALLINE SILICON FILMS

被引：14

作者：

KAWACHI, G ^{[1
]}

AOYAMA, T ^{[1
]}

MIYATA, K ^{[1
]}

OHNO, Y ^{[1
]}

MIMURA, A ^{[1
]}

KONISHI, N ^{[1
]}

MOCHIZUKI, Y ^{[1
]}

机构：

[1] HITACHI LTD,HITACHI RES LAB,HITACHI,IBARAKI 31912,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 11期

关键词：

D O I：

10.1149/1.2086261

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A large-area ion-doping apparatus for polycrystalline silicon films has been developed. By combining the apparatus with the excimer laser-annealing technique, a heavily-doped layer with a sheet resistance below 103 Ω/□ is formed, in a doping time of less than 30s, The doping uniformity is ±5% over an area of 100 mm × 100 mm. This apparatus is suitable for fabrication of large-area poly-Si devices. © 1990, The Electrochemical Society, Inc. All rights reserved.

引用

页码：3522 / 3526

页数：5

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