FABRICATION AND PERFORMANCE OF 1.5-MU-M GAINASP TRAVELING-WAVE LASER-AMPLIFIERS WITH ANGLED FACETS

被引:45
作者
ZAH, CE
OSINSKI, JS
CANEAU, C
MENOCAL, SG
REITH, LA
SALZMAN, J
SHOKOOHI, FK
LEE, TP
机构
关键词
D O I
10.1049/el:19870695
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
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页码:990 / 992
页数:3
相关论文
共 10 条
[1]  
ALPHONSE GA, 1987, OFC IOOC RENO
[2]  
IKEGAMI I, 1972, IEEE J QUANTUM ELECT, V8, P470
[3]   LOW THRESHOLD RIDGE WAVEGUIDE LASER AT 1.55-MU-M [J].
KAMINOW, IP ;
STULZ, LW ;
KO, JS ;
MILLER, BI ;
FELDMAN, RD ;
DEWINTER, JC ;
POLLACK, MA .
ELECTRONICS LETTERS, 1983, 19 (21) :877-879
[4]  
KOBAYASHI S, 1984, IEEE SPECTRUM MAY, P26
[5]   SIGNAL GAIN SATURATION IN 2-CHANNEL COMMON AMPLIFICATION USING A 1.5-MU-M INGAASP TRAVELING-WAVE LASER-AMPLIFIER [J].
MUKAI, T ;
INOUE, K ;
SAITOH, T .
ELECTRONICS LETTERS, 1987, 23 (08) :396-397
[6]  
NIESEN J, 1987, SW OPTICS C ALBUQUER
[7]   THEORETICAL-ANALYSIS AND FABRICATION OF ANTIREFLECTION COATINGS ON LASER-DIODE FACETS [J].
SAITOH, T ;
MUKAI, T ;
MIKAMI, O .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1985, 3 (02) :288-293
[8]   BROAD-BAND 1.5 MU-M GAINASP TRAVELING-WAVE LASER-AMPLIFIER WITH HIGH-SATURATION OUTPUT POWER [J].
SAITOH, T ;
MUKAI, T .
ELECTRONICS LETTERS, 1987, 23 (05) :218-219
[9]   GAAS-GAAIAS DIODE-LASERS WITH ANGLED PUMPING STRIPES [J].
SCIFRES, DR ;
STREIFER, W ;
BURNHAM, RD .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (04) :223-227
[10]   DIRECTLY CONTROLLED DEPOSITION OF ANTIREFLECTION COATINGS FOR SEMICONDUCTOR-LASERS [J].
SERENYI, M ;
HABERMEIER, HU .
APPLIED OPTICS, 1987, 26 (05) :845-849