THEORETICAL-ANALYSIS AND FABRICATION OF ANTIREFLECTION COATINGS ON LASER-DIODE FACETS

被引:70
作者
SAITOH, T
MUKAI, T
MIKAMI, O
机构
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D O I
10.1109/JLT.1985.1074202
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:288 / 293
页数:6
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共 15 条
[1]  
BORN M, 1975, PRINCIPLES OPTICS, P55
[2]   REFRACTIVE-INDEX OF IN1-XGAXASYP1-Y LAYERS AND INP IN THE TRANSPARENT WAVELENGTH REGION [J].
BROBERG, B ;
LINDGREN, S .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (09) :3376-3381
[3]   THEORETICAL PERFORMANCE OF AN ANTIREFLECTION COATING FOR A DIODE-LASER AMPLIFIER [J].
CLARKE, RH .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1982, 53 (05) :495-499
[4]  
Eisenstein G, 1984, Appl Opt, V23, P161, DOI 10.1364/AO.23.000161
[5]  
EISENSTEIN G, 1984, BELL SYST TECH J, V63, P357
[6]   GAIN SPECTRA IN GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS [J].
HAKKI, BW ;
PAOLI, TL .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) :1299-1306
[7]   FUSION SPLICES FOR SINGLE-MODE OPTICAL FIBERS [J].
HATAKEYAMA, I ;
TSUCHIYA, H .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (08) :614-619
[8]   LATERAL CONFINEMENT INGAASP SUPERLUMINESCENT DIODE AT 1.3 MU-M [J].
KAMINOW, IP ;
EISENSTEIN, G ;
STULZ, LW ;
DENTAI, AG .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (01) :78-82
[9]   SELECTION OF MODES PERPENDICULAR TO JUNCTION PLANE IN GAAS LARGE-CAVITY DOUBLE-HETEROSTRUCTURE LASERS [J].
KRUPKA, DC .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :390-400
[10]   GAIN, FREQUENCY BANDWIDTH, AND SATURATION OUTPUT POWER OF ALGAAS DH LASER-AMPLIFIERS [J].
MUKAI, T ;
YAMAMOTO, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (06) :1028-1034