QUANTITATIVE MEASUREMENT OF STRESS IN SILICON BY PHOTOELASTICITY AND ITS APPLICATION

被引：24

作者：

KOTAKE, H

TAKASU, S

机构：

来源：

关键词：

D O I：

10.1149/1.2129612

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：179 / 184

页数：6

共 9 条

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BOND, WL ;

ANDRUS, J .

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DENICOLA, RO ;

TAUBER, RN .

[3]

EDMONDS HD, 1976, 321 EL SOC EXT ABSTR, P823

[4]

GIARDINI AA, 1958, AM MINERAL, V43, P249

[5] STRESS-OPTICAL STUDY OF STRONTIUM TITANATE [J].

GIARDINI, AA .

[6]

HORNSTRA J, 1959, PHILIPS RES REP, V14, P237

[7]

LADERHANDLER SR, 1959, J APPL PHYS, V30, P1631

[8]

TAKASU S, 1975, CRYSTAL GROWTH CHARA, P317

[9]

TAKASU S, 1975, JPN J APPL PHYS S, V44, P259