VACUUM DEPOSITION OF HG0.8CD0.2TE

被引：23

作者：

HOHNKE, DK

HOLLOWAY, H

LOGOTHET.EM

CRAWLEY, RC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 06期

关键词：

D O I：

10.1063/1.1660567

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2487 / &

共 29 条

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[19] STRUCTURE OF ORIENTED VAPOR-DEPOSITED GAAS FILMS STUDIED BY ELECTRON DIFFRACTION [J].

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[20] EPITAXY OF COMPOUND SEMICONDUCTORS BY FLASH EVAPORATION [J].

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