DEPENDENCE OF ENERGY-BAND GAP AND LATTICE-CONSTANT OF III-V SEMICONDUCTORS ON ELECTRONEGATIVITY DIFFERENCE OF THE CONSTITUENT ELEMENTS

被引：14

作者：

GONG, XY

GAO, FS

YAMAGUCHI, T

KAN, H

KUMAGAWA, M

机构：

[1] Research Institute of Electronics, Shizuoka University, Hamamatsu, 432

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1992年 / 27卷 / 08期

关键词：

D O I：

10.1002/crat.2170270817

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The dependence of the energy bandgap and lattice constant of III-V semiconductors on the electronegativity difference of the constituent elements were investigated. Some empirical expressions for estimating the energy bandgap and lattice constant with respect to solid compositions for mixed crystals were obtained. The results for some material systems predicted by electronegativity difference approach (ENDA) are compared with those obtained experimentally and those calculated by classical interpolation techniques (IT). The agreement between them is quite good, and it is demonstrated that ENDA is a simple and useful method for designing III-V mixed crystals.

引用

页码：1087 / 1096

页数：10

共 12 条

[1] STUDIES OF THE GA1-XINXAS1-YSBY QUATERNARY ALLOY SYSTEM .1. LIQUID-PHASE EPITAXIAL-GROWTH AND ASSESSMENT [J].