MOLECULAR-BEAM EPITAXY GROWTH OF THIN-FILMS OF SNS2 AND SNSE2 ON CLEAVED MICA AND THE BASAL PLANES OF SINGLE-CRYSTAL LAYERED SEMICONDUCTORS - REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION, LOW-ENERGY-ELECTRON DIFFRACTION, PHOTOEMISSION, AND SCANNING-TUNNELING-MICROSCOPY ATOMIC-FORCE MICROSCOPY CHARACTERIZATION

被引：35

作者：

SCHLAF, R

LOUDER, D

LANG, O

PETTENKOFER, C

JAEGERMANN, W

NEBESNY, KW

LEE, PA

PARKINSON, BA

ARMSTRONG, NR

机构：

[1] UNIV ARIZONA,DEPT CHEM,TUCSON,AZ 85721

[2] HAHN MEITNER INST BERLIN GMBH,BEREICH CG,D-14109 BERLIN,GERMANY

[3] COLORADO STATE UNIV,DEPT CHEM,FT COLLINS,CO 80523

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1995年 / 13卷 / 03期

关键词：

D O I：

10.1116/1.579766

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1761 / 1767

页数：7

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