NON-LATTICE MATCHED GROWTH OF INXGA1-XAS (0.53-LESS-THAN-X-LESS-THAN-0.80) ON INP

The linearly-graded low-temperature buffer (LGLTB) approach developed by Harmand et al. [1] for growing materials with lattice parameters different from the substrate was extended to thick layers and minority carrier devices, using InxGa1-xAs alloys with x = 0.53 to 0.80 on InP. Structurally, the device layers were 90% to 100% relaxed with less than mid 10(5) cm-2 threading dislocations. Mobilities for 3 mum thick layers as well as modulation-doped structures of In0.80Ga0.20As were as high as 16,300 cm2/V.s at room temperature. p-n Homojunction diodes were nearly ideal and could be modeled with a diffusion-controlled leakage current using minority carrier lifetimes of tau(n) = tau(p) = 5 X 10(-9) s.