ASYMMETRIES IN DISLOCATION DENSITIES, SURFACE-MORPHOLOGY, AND STRAIN OF GAINAS/GAAS SINGLE HETEROLAYERS

被引：199

作者：

KAVANAGH, KL

CAPANO, MA

HOBBS, LW

BARBOUR, JC

MAREE, PMJ

SCHAFF, W

MAYER, JW

PETTIT, D

WOODALL, JM

STROSCIO, JA

FEENSTRA, RM

机构：

[1] MIT,CAMBRIDGE,MA 02139

[2] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

[3] CORNELL UNIV,ITHACA,NY 14853

[4] FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS

[5] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 10期

关键词：

D O I：

10.1063/1.341232

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4843 / 4852

页数：10

共 21 条

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[2] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX
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[3] VARIATION OF THE CRITICAL LAYER THICKNESS WITH IN CONTENT IN STRAINED INX GA1-XAS-GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1987, 51 (10) : 752 - 754
[4] STRUCTURE AND RECOMBINATION IN INGAAS/GAAS HETEROSTRUCTURES
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[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (03) : 693 - 703
[5] ELIMINATION OF INTERFACE DEFECTS IN MISMATCHED EPILAYERS BY A REDUCTION IN GROWTH AREA
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PETTIT, GD
WOODALL, JM
AST, DG
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (18) : 1496 - 1498
[6] FITZGERALD EA, 1988, J APPL PHYS, V63, P4965
[7] FITZGERALD EC, UNPUB
[8] CRITICAL LAYER THICKNESS IN IN0.2GA0.8AS/GAAS SINGLE STRAINED QUANTUM-WELL STRUCTURES
FRITZ, IJ
GOURLEY, PL
DAWSON, LR
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (13) : 1004 - 1006
[9] CONTROVERSY OF CRITICAL LAYER THICKNESS FOR INGAAS/GAAS STRAINED-LAYER EPITAXY
GOURLEY, PL
FRITZ, IJ
DAWSON, LR
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (05) : 377 - 379
[10] HIGH-STRESS DEFORMATION OF GAAS
KUESTERS, KH
DECOOMAN, BC
CARTER, CB
[J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1986, 53 (01): : 141 - 159

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