HIGH-STRESS DEFORMATION OF GAAS

[1] INVESTIGATIONS OF WELL DEFINED DISLOCATIONS IN SILICON [J]. PHYSICA B & C, 1983, 116 (1-3): : 583 - 593

[2] ALEXANDER H, 1979, J PHYS, V40

[3] ANSTIS GR, 1981, I PHYS C SERIES, V60, P15

[4] THE CORE STRUCTURE OF DISLOCATIONS IN CZ SILICIUM STUDIED BY ELECTRON-MICROSCOPY [J]. JOURNAL DE PHYSIQUE, 1983, 44 (NC-4): : 15 - 24

[5] BOURRET A, 1981, I PHYS C SER, V60, P9

[6] DISLOCATION VELOCITIES IN GAAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (05) : 737 - 745

[7] INVESTIGATIONS OF DISLOCATION STRAIN FIELDS USING WEAK BEAMS [J]. PHILOSOPHICAL MAGAZINE, 1969, 20 (168): : 1265 - &

[8] FEUILLET G, 1982, THESIS U OXFORD

[9] A POLISHING ETCHANT FOR III-V SEMICONDUCTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (09) : 880 - 880

[10] DISSOCIATION OF DISLOCATIONS IN GAAS [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1978, 38 (06): : 733 - 737

[1] INVESTIGATIONS OF WELL DEFINED DISLOCATIONS IN SILICON [J]. PHYSICA B & C, 1983, 116 (1-3): : 583 - 593

[2] ALEXANDER H, 1979, J PHYS, V40

[3] ANSTIS GR, 1981, I PHYS C SERIES, V60, P15

[4] THE CORE STRUCTURE OF DISLOCATIONS IN CZ SILICIUM STUDIED BY ELECTRON-MICROSCOPY [J]. JOURNAL DE PHYSIQUE, 1983, 44 (NC-4): : 15 - 24

[5] BOURRET A, 1981, I PHYS C SER, V60, P9

[6] DISLOCATION VELOCITIES IN GAAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (05) : 737 - 745

[7] INVESTIGATIONS OF DISLOCATION STRAIN FIELDS USING WEAK BEAMS [J]. PHILOSOPHICAL MAGAZINE, 1969, 20 (168): : 1265 - &

[8] FEUILLET G, 1982, THESIS U OXFORD

[9] A POLISHING ETCHANT FOR III-V SEMICONDUCTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (09) : 880 - 880

[10] DISSOCIATION OF DISLOCATIONS IN GAAS [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1978, 38 (06): : 733 - 737