INVESTIGATIONS OF WELL DEFINED DISLOCATIONS IN SILICON

被引：42

作者：

ALEXANDER, H

KISIELOWSKIKEMMERICH, C

WEBER, ER

机构：

来源：

PHYSICA B & C | 1983年 / 116卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(83)90311-X

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：583 / 593

页数：11

共 32 条

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[4] ON THE REAL STRUCTURE OF MONOCRYSTALLINE SILICON NEAR DISLOCATION SLIP PLANES
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EREMENKO, VG
FARBER, BY
NIKITENKO, VI
YAKIMOV, EB
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 68 (01): : 53 - 60
[5] DROZDOV NA, 1976, JETP LETT+, V23, P597
[6] PHOTO-EPR OF DISLOCATIONS IN SILICON
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ALEXANDER, H
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (01): : 251 - 259
[7] RECOMBINATION AT DISLOCATIONS
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[8] VELOCITIES OF SCREW AND 60-DEGREES DISLOCATIONS IN N-TYPE AND P-TYPE SILICON
GEORGE, A
CHAMPIER, G
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 53 (02): : 529 - 540
[9] MEANING OF DISLOCATION VELOCITIES MEASURED IN DOPED SILICON
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CHAMPIER, G
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 29 (01): : K79 - K82
[10] GEORGE A, 1972, PHYS STATUS SOLIDI B, V53, P483, DOI 10.1002/pssb.2220530209