INVESTIGATIONS OF WELL DEFINED DISLOCATIONS IN SILICON

[11] MOTION OF PARTIAL DISLOCATIONS [J]. JOURNAL DE PHYSIQUE, 1979, 40 : 127 - 131

[12] PHOTO-LUMINESCENCE IN PLASTICALLY TWISTED SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 65 (01): : K99 - K101

[13] HU SM, 1981, MATER RES SOC S P, V2, P333

[14] JUNG C, 1981, THESIS KOELN

[15] RECOMBINATION ENHANCED DEFECT REACTIONS [J]. SOLID-STATE ELECTRONICS, 1978, 21 (11-1) : 1391 - 1401

[16] KISIELOWSKIKEMM.C, UNPUB

[17] KISIELOWSKIKEMM.C, 1982, THESIS KOELN

[18] KUESTERS KH, 1983, PHYSICA B, V116, P594

[19] THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON [J]. PHYSICA B & C, 1983, 116 (1-3): : 600 - 605

[20] OURMAZD A, 1982, P C EMSA

[11] MOTION OF PARTIAL DISLOCATIONS [J]. JOURNAL DE PHYSIQUE, 1979, 40 : 127 - 131

[12] PHOTO-LUMINESCENCE IN PLASTICALLY TWISTED SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 65 (01): : K99 - K101

[13] HU SM, 1981, MATER RES SOC S P, V2, P333

[14] JUNG C, 1981, THESIS KOELN

[15] RECOMBINATION ENHANCED DEFECT REACTIONS [J]. SOLID-STATE ELECTRONICS, 1978, 21 (11-1) : 1391 - 1401

[16] KISIELOWSKIKEMM.C, UNPUB

[17] KISIELOWSKIKEMM.C, 1982, THESIS KOELN

[18] KUESTERS KH, 1983, PHYSICA B, V116, P594

[19] THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON [J]. PHYSICA B & C, 1983, 116 (1-3): : 600 - 605

[20] OURMAZD A, 1982, P C EMSA