INVESTIGATIONS OF WELL DEFINED DISLOCATIONS IN SILICON

[21] OURMAZD A, 1981, I PHYS C SER, V60, P63

[22] RADIATIVE RECOMBINATION ON DISLOCATIONS IN SILICON-CRYSTALS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (07) : L537 - L540

[23] SUEZAWA M, 1980, I PHYS C SER, V59, P407

[24] SUMINO K, 1980, INT C MODELLING PHYS

[25] MOTION OF DISLOCATIONS FROM AN INDENTATION ROSETTE ON SILICON-CRYSTALS [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1980, 59 (01): : 195 - 200

[26] LUMINESCENCE IN SLIPPED AND DISLOCATION-FREE LASER-ANNEALED SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 37 (12) : 1078 - 1079

[27] EPR OF DISLOCATIONS IN SILICON [J]. JOURNAL DE PHYSIQUE, 1979, 40 : 101 - 106

[28] A NEW ELECTRON-PARAMAGNETIC-RES CENTER DUE TO DISLOCATIONS IN PHOSPHORUS DOPED SILICON [J]. SOLID STATE COMMUNICATIONS, 1981, 37 (05) : 371 - 373

[29] WEBER E, 1981, VERHANDLG DPG, V16, P225

[30] Weber J. K. R., UNPUB

[21] OURMAZD A, 1981, I PHYS C SER, V60, P63

[22] RADIATIVE RECOMBINATION ON DISLOCATIONS IN SILICON-CRYSTALS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (07) : L537 - L540

[23] SUEZAWA M, 1980, I PHYS C SER, V59, P407

[24] SUMINO K, 1980, INT C MODELLING PHYS

[25] MOTION OF DISLOCATIONS FROM AN INDENTATION ROSETTE ON SILICON-CRYSTALS [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1980, 59 (01): : 195 - 200

[26] LUMINESCENCE IN SLIPPED AND DISLOCATION-FREE LASER-ANNEALED SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 37 (12) : 1078 - 1079

[27] EPR OF DISLOCATIONS IN SILICON [J]. JOURNAL DE PHYSIQUE, 1979, 40 : 101 - 106

[28] A NEW ELECTRON-PARAMAGNETIC-RES CENTER DUE TO DISLOCATIONS IN PHOSPHORUS DOPED SILICON [J]. SOLID STATE COMMUNICATIONS, 1981, 37 (05) : 371 - 373

[29] WEBER E, 1981, VERHANDLG DPG, V16, P225

[30] Weber J. K. R., UNPUB