VELOCITIES OF SCREW AND 60-DEGREES DISLOCATIONS IN N-TYPE AND P-TYPE SILICON

The velocities of screw and 60° dislocations in silicon are measured for temperatures ranging from 520 to 800 °C and stresses ranging from 4 to 30 MNm−2 and for various concentrations of phosphorous or boron atoms. n‐doping results in an increase of the velocities of screw and 60° dislocations. In moderately p‐doped Si, no clear effect is observed for screw dislocations while the velocities of 60° dislocations are slightly lower than in intrinsic Si. The effect of doping on the dislocation velocity is discussed mainly in terms of Haasen's calculation of the influence of the electrical charge carried by the dislocation on the formation of a double kink. In the case of 60° dislocations, the model fairly describes the measurements in heavily doped Si (≈ 1019 atoms cm−3) but underestimates the effect observed at moderate levels of doping. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA