MEANING OF DISLOCATION VELOCITIES MEASURED IN DOPED SILICON

被引：5

作者：

GEORGE, A ^{[1
]}

CHAMPIER, G ^{[1
]}

机构：

[1] INST NATL POLYTECH LORRAINE,LAB PHYS SOLIDE,NANCY,FRANCE

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 29卷 / 01期

关键词：

D O I：

10.1002/pssa.2210290159

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K79 / K82

页数：4

共 7 条

[1] BADILENKO NA, 1973, FIZ TVERD TELA+, V15, P912
[2] EFFECT OF IMPURITIES ON INDIVIDUAL DISLOCATION MOBILITY IN SILICON
EROFEEV, VN
NIKITENKO, VI
OSVENSKII, VB
[J]. PHYSICA STATUS SOLIDI, 1969, 35 (01): : 79 - +
[3] GEORGE A, 1972, PHYS STATUS SOLIDI B, V53, P483, DOI 10.1002/pssb.2220530209
[4] GEORGE A, 1972, THESIS NANCY
[5] GEORGE AD, TO BE PUBLISHED
[6] Novikov N. N., 1972, Soviet Physics - Solid State, V14, P1356
[7] CHANGE OF DISLOCATION VELOCITY WITH FERMI LEVEL IN SILICON
PATEL, JR
FREELAND, PE
[J]. PHYSICAL REVIEW LETTERS, 1967, 18 (20) : 833 - &