GROWTH AND PROPERTIES OF VACUUM-DEPOSITED CDIN2S4 FILMS

被引:14
作者
HORIBA, R
NAKANISHI, H
ENDO, S
IRIE, T
机构
[1] SCI UNIV TOKYO,FAC SCI & TECHNOL,DEPT ELECT ENGN,NODA,CHIBA 278,JAPAN
[2] SCI UNIV TOKYO,FAC ENGN,DEPT ELECT ENGN,SHINJUKU KU,TOKYO 162,JAPAN
关键词
D O I
10.1016/0039-6028(79)90427-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The growth and the structural, optical and photoelectronic properties of vacuum deposited CdIn2S4 thin films are reported. Glass plate was used for the substrate material. The X-ray diffractometer tracing and the RHEED pattern imply a strong {111} fiber texture of the films. SEM and XMA data are reported. The direct and indirect gaps deduced from the optical absorption and photoconductivity spectra of the films are in reasonable agreement with those for the single crystals. The current - voltage and current illumination characteristics are reported. Included are the preliminary experiments on the formation of n-CdIn2S4/p-CuInSe2 heterostructure. © 1979.
引用
收藏
页码:498 / 503
页数:6
相关论文
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