ACCURATE ANALYSIS OF TEMPERATURE EFFECTS IN IC-VBE CHARACTERISTICS WITH APPLICATION TO BANDGAP REFERENCE SOURCES

被引：184

作者：

TSIVIDIS, YP

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1980年 / 15卷 / 06期

关键词：

Compendex;

D O I：

10.1109/JSSC.1980.1051519

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ELECTRONIC CIRCUITS

引用

页码：1076 / 1084

页数：9

共 24 条

[1] TEMPERATURE-DEPENDENCE OF BAND-GAP OF SILICON [J].

BLUDAU, W ;

ONTON, A ;

HEINKE, W .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1846-1848

[2] SIMPLE 3-TERMINAL IC BANDGAP REFERENCE [J].

BROKAW, AP .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (06) :388-393

[3]

BROKAW AP, COMMUNICATION

[4] SILICON TRANSISTOR BIASING FOR LINEAR COLLECTOR CURRENT TEMPERATURE DEPENDENCE [J].

BRUGLER, JS .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1967, SC 2 (02) :57-&

[5] NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM [J].

DEAN, PJ ;

HAYNES, JR ;

FLOOD, WF .

PHYSICAL REVIEW, 1967, 161 (03) :711-&

[6]

DOBKIN RC, COMMUNICATION

[7]

DOBKIN RC, 1974, DIG TECH PAPERS INT, P126

[8]

GRAY PR, 1977, ANAL DESIGN ANALOG I

[9]

HILBIBER DF, 1964, FEB INT SOL STAT CIR, P32

[10] PRECISION REFERENCE VOLTAGE SOURCE [J].

KUIJK, KE .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1973, SC 8 (03) :222-226

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