ACCURATE ANALYSIS OF TEMPERATURE EFFECTS IN IC-VBE CHARACTERISTICS WITH APPLICATION TO BANDGAP REFERENCE SOURCES

被引：184

作者：

TSIVIDIS, YP

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1980年 / 15卷 / 06期

关键词：

Compendex;

D O I：

10.1109/JSSC.1980.1051519

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ELECTRONIC CIRCUITS

引用

页码：1076 / 1084

页数：9

共 24 条

[11]

MACFARLENE GG, 1958, PHYS REV, V11, P1245

[12] MEASUREMENT OF THE TEMPERATURE-DEPENDENCE OF THE IC(VBE) CHARACTERISTICS OF INTEGRATED BIPOLAR-TRANSISTORS [J].

MEIJER, GCM ;

VINGERLING, K .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (02) :237-240

[13] INTEGRATED BANDGAP REFERENCE [J].

MEIJER, GCM ;

VERHOEFF, JB .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (03) :403-406

[14]

MEIJER GCM, 1978, DIG TECH PAPERS EURO

[15] PRECISION SILICON TRANSISTOR THERMOMETER [J].

OHTE, A ;

YAMAGATA, M .

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1977, 26 (04) :335-341

[16]

PALMER C, COMMUNICATION

[17] VALLEY-ORBIT SPLITTING OF FREE EXCITONS - ABSORPTION EDGE OF SI [J].

SHAKLEE, KL ;

NAHORY, RE .

PHYSICAL REVIEW LETTERS, 1970, 24 (17) :942-&

[18] MEASUREMENTS OF BANDGAP NARROWING IN SI BIPOLAR-TRANSISTORS [J].

SLOTBOOM, JW ;

DEGRAAFF, HC .

SOLID-STATE ELECTRONICS, 1976, 19 (10) :857-862

[19]

SOLOMON J, COMMUNICATION

[20]

SZE SM, 1969, PHYSICS SEMICONDUCTO

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