PRESENT STATE OF STRUCTURAL STABILITY AND GROWTH OF SILICON-CARBIDE POLYTYPES

被引：10

作者：

DUBEY, M ^{[1
]}

RAM, US ^{[1
]}

RAI, KN ^{[1
]}

SINGH, G ^{[1
]}

机构：

[1] BANARAS HINDU UNIV,DEPT PHYS,VARANASI,INDIA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 18卷 / 02期

关键词：

D O I：

10.1002/pssa.2210180231

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：689 / 698

页数：10

共 31 条

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[9] *DER SYMMETRIEEINFLUSS AUF DEN ALLGEMEINEN LOSUNGSANSATZ EINDIMENSIONALER FEHLORDNUNGSPROBLEME [J].

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[10] POLYTYPISM IN SIC CRYSTALS [J].

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