ELECTROREFLECTANCE OF SILICON

被引：37

作者：

GROVER, JW

HANDLER, P

机构：

[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1974年 / 9卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.9.2600

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2600 / 2606

页数：7

共 38 条

[1] LINEARIZED THIRD-DERIVATIVE SPECTROSCOPY WITH DEPLETION-BARRIER MODULATION [J].

ASPNES, DE .

PHYSICAL REVIEW LETTERS, 1972, 28 (14) :913-&

[2] INTERBAND DIELECTRIC PROPERTIES OF SOLIDS IN AN ELECTRIC FIELD [J].

ASPNES, DE ;

HANDLER, P ;

BLOSSEY, DF .

PHYSICAL REVIEW, 1968, 166 (03) :921-&

[3] Wannier Exciton in an electric field. I. Optical absorption by bound and continuum states [J].

Blossey, Daniel F. .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10) :3976-3990

[4] WANNIER EXCITON IN AN ELECTRIC FIELD .2. ELECTROABSORPTION IN DIRECT-BAND-GAP SOLIDS [J].

BLOSSEY, DF .

PHYSICAL REVIEW B, 1971, 3 (04) :1382-&

[5] ELECTRONIC SPECTRA OF CRYSTALLINE GERMANIUM + SILICON [J].

BRUST, D .

PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A) :1337-&

[6] ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD [J].

CARDONA, M ;

POLLAK, FH .

PHYSICAL REVIEW, 1966, 142 (02) :530-&

[7] ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J].

CARDONA, M ;

SHAKLEE, KL ;

POLLAK, FH .

PHYSICAL REVIEW, 1967, 154 (03) :696-+

[8]

Cardona M., 1969, MODULATION SPECTROSC

[9] APPLICATION OF METHOD OF TIGHT BINDING TO CALCULATION OF ENERGY BAND STRUCTURES OF DIAMOND, SILICON, AND SODIUM CRYSTALS [J].

CHANEY, RC ;

LIN, CC ;

LAFON, EE .

PHYSICAL REVIEW B, 1971, 3 (02) :459-&

[10] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].

COHEN, ML ;

BERGSTRESSER, TK .

PHYSICAL REVIEW, 1966, 141 (02) :789-+

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