APPLICATION OF METHOD OF TIGHT BINDING TO CALCULATION OF ENERGY BAND STRUCTURES OF DIAMOND, SILICON, AND SODIUM CRYSTALS

被引：101

作者：

CHANEY, RC

LIN, CC

LAFON, EE

机构：

来源：

PHYSICAL REVIEW B | 1971年 / 3卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.3.459

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

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页码：459 / &

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