MAGNETICALLY INDUCED IMPURITY BANDING IN N-INSB

[1] ALEN JW, 1955, J ELECTRONICS, V1, P138

[2] [Anonymous], COMMUNICATION

[3] BEER AC, 1955, HELV PHYS ACTA, V28, P529

[4] SCATTERING OF CARRIERS BY IONIZED IMPURITIES IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) : 262 - 269

[5] BROOKS H, 1956, ADV ELECTRONICS ELEC, V7

[6] THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1950, 77 (03): : 388 - 390

[7] CONWELL E, 1946, PHYS REV, V69, P258

[8] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1956, 103 (01): : 51 - 60

[9] HIGH FIELD MOBILITY IN GERMANIUM WITH IMPURITY SCATTERING DOMINANT [J]. PHYSICAL REVIEW, 1953, 90 (05): : 769 - 772

[10] DINGLE RB, 1955, PHILOS MAG, V46, P831

[1] ALEN JW, 1955, J ELECTRONICS, V1, P138

[2] [Anonymous], COMMUNICATION

[3] BEER AC, 1955, HELV PHYS ACTA, V28, P529

[4] SCATTERING OF CARRIERS BY IONIZED IMPURITIES IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) : 262 - 269

[5] BROOKS H, 1956, ADV ELECTRONICS ELEC, V7

[6] THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1950, 77 (03): : 388 - 390

[7] CONWELL E, 1946, PHYS REV, V69, P258

[8] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1956, 103 (01): : 51 - 60

[9] HIGH FIELD MOBILITY IN GERMANIUM WITH IMPURITY SCATTERING DOMINANT [J]. PHYSICAL REVIEW, 1953, 90 (05): : 769 - 772

[10] DINGLE RB, 1955, PHILOS MAG, V46, P831